MSRT20060(A)D GeneSiC Semiconductor


266913665232115msrt20060ad_thru_msrt200100ad.pdf Hersteller: GeneSiC Semiconductor
Silicon Standard Recovery Diode
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Technische Details MSRT20060(A)D GeneSiC Semiconductor

Description: DIODE MODULE GP 600V 200A 3TOWER, Packaging: Bulk, Package / Case: Three Tower, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Diode Configuration: 1 Pair Series Connection, Current - Average Rectified (Io) (per Diode): 200A, Supplier Device Package: Three Tower, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V.

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MSRT20060(A)D MSRT20060(A)D Hersteller : GeneSiC Semiconductor msrt200100(a)d.pdf Description: DIODE GEN PURP 600V 200A 3 TOWER
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MSRT20060AD MSRT20060AD Hersteller : GeneSiC Semiconductor Description: DIODE MODULE GP 600V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
MSRT20060(A)D MSRT20060(A)D Hersteller : GeneSiC Semiconductor msrt20060ad_thru_msrt200100ad-1132254.pdf Discrete Semiconductor Modules 600V 200A Forward
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