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MTW24N40E

MTW24N40E onsemi


ONSM-S-A0002809501-1.pdf?t.download=true&u=5oefqw Hersteller: onsemi
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 12A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
auf Bestellung 3282 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
43+16.81 EUR
Mindestbestellmenge: 43
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Technische Details MTW24N40E onsemi

Description: N-CHANNEL POWER MOSFET, Packaging: Bulk, Part Status: Active, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 160mOhm @ 12A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 400 V, Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V.

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MTW24N40E ONSM-S-A0002809501-1.pdf?t.download=true&u=5oefqw
auf Bestellung 30 Stücke:
Lieferzeit 21-28 Tag (e)