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MUN2214T1

MUN2214T1 onsemi

MUN2211T1%20Series.pdf Hersteller: onsemi
Description: TRANS BRT NPN 100MA 50V SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 117000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
11539+0.072 EUR
Mindestbestellmenge: 11539
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Produktbewertung abgeben

Technische Details MUN2214T1 onsemi

Description: TRANS BRT NPN 100MA 50V SC59, Packaging: Cut Tape (CT), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V, Supplier Device Package: SC-59, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 338 mW, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 47 kOhms.

Weitere Produktangebote MUN2214T1

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Preis ohne MwSt
MUN2214T1 MUN2211T1%20Series.pdf
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
MUN2214T1 Hersteller : ONSEMI ONSMS21501-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - MUN2214T1 - TRANS PREBIAS NPN 338MW SC59
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 117000 Stücke:
Lieferzeit 14-21 Tag (e)
MUN2214T1 MUN2214T1 Hersteller : onsemi MUN2211T1%20Series.pdf Description: TRANS BRT NPN 100MA 50V SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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