MUR2560R GeneSiC Semiconductor

Description: DIODE GEN PURP REV 600V 25A DO4, Packaging: Bulk, Package / Case: DO-203AA, DO-4, Stud, Mounting Type: Chassis, Stud Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 90 ns, Technology: Standard, Reverse Polarity, Current - Average Rectified (Io): 25A, Supplier Device Package: DO-4, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 25 A, Current - Reverse Leakage @ Vr: 10 µA @ 50 V.