MUR2X060A02 GeneSiC Semiconductor
auf Bestellung 21 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 126.7 EUR |
| 10+ | 109.17 EUR |
| 25+ | 102.88 EUR |
| 52+ | 102.54 EUR |
| 104+ | 102.52 EUR |
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Technische Details MUR2X060A02 GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 60A SOT227, Packaging: Bulk, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 75 ns, Technology: Standard, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 60A, Supplier Device Package: SOT-227, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 60 A, Current - Reverse Leakage @ Vr: 25 µA @ 200 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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MUR2X060A02 | Hersteller : GeneSiC Semiconductor |
 Description: DIODE GEN PURP 200V 60A SOT227Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 60 A Current - Reverse Leakage @ Vr: 25 µA @ 200 V |
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