MUR420HA0G

MUR420HA0G Taiwan Semiconductor Corporation


MUR420%20SERIES_J2105.pdf Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 4A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
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Technische Details MUR420HA0G Taiwan Semiconductor Corporation

Description: DIODE GEN PURP 200V 4A DO201AD, Packaging: Tape & Box (TB), Package / Case: DO-201AD, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25 ns, Technology: Standard, Capacitance @ Vr, F: 65pF @ 4V, 1MHz, Current - Average Rectified (Io): 4A, Supplier Device Package: DO-201AD, Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 890 mV @ 4 A, Current - Reverse Leakage @ Vr: 5 µA @ 200 V, Qualification: AEC-Q101.