MURF10L60 C0G

MURF10L60 C0G Taiwan Semiconductor Corporation


MURF10L60_A1601.pdf Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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Technische Details MURF10L60 C0G Taiwan Semiconductor Corporation

Description: DIODE GEN PURP 600V 10A ITO220AC, Packaging: Tube, Package / Case: TO-220-2 Full Pack, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 65 ns, Technology: Standard, Current - Average Rectified (Io): 10A, Supplier Device Package: ITO-220AC, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A, Current - Reverse Leakage @ Vr: 5 µA @ 600 V.

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MURF10L60 C0G MURF10L60 C0G Hersteller : Taiwan Semiconductor MURF10L60_A1601-1113947.pdf Rectifiers 65ns, 10A, 600V, High Efficient Recovery Rectifier
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