MURS120HE3_A/H Vishay General Semiconductor
auf Bestellung 5250 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 44+ | 1.19 EUR |
| 52+ | 1.01 EUR |
| 100+ | 0.7 EUR |
| 500+ | 0.55 EUR |
| 750+ | 0.44 EUR |
| 2250+ | 0.38 EUR |
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Technische Details MURS120HE3_A/H Vishay General Semiconductor
Description: DIODE GEN PURP 200V 2A DO214AA, Packaging: Tape & Reel (TR), Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Current - Average Rectified (Io): 2A, Supplier Device Package: DO-214AA (SMB), Operating Temperature - Junction: -65°C ~ 175°C, Grade: Automotive, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A, Current - Reverse Leakage @ Vr: 2 µA @ 200 V, Qualification: AEC-Q101.
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MURS120HE3_A/H | Hersteller : Vishay |
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MURS120HE3_A/H | Hersteller : Vishay |
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MURS120HE3_A/H | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 2A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 200 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |