MURS160HE3_A/H Vishay
auf Bestellung 1490 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
618+ | 0.25 EUR |
623+ | 0.24 EUR |
1000+ | 0.23 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details MURS160HE3_A/H Vishay
Description: DIODE GEN PURP 600V 2A DO214AA, Packaging: Tape & Reel (TR), Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 75 ns, Technology: Standard, Current - Average Rectified (Io): 2A, Supplier Device Package: DO-214AA (SMB), Operating Temperature - Junction: -65°C ~ 175°C, Grade: Automotive, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 600 V, Qualification: AEC-Q101.
Weitere Produktangebote MURS160HE3_A/H nach Preis ab 0.17 EUR bis 1.17 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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MURS160HE3_A/H | Hersteller : Vishay | Rectifier Diode Switching 600V 2A 75ns Automotive AEC-Q101 2-Pin SMB T/R |
auf Bestellung 750 Stücke: Lieferzeit 14-21 Tag (e) |
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MURS160HE3_A/H | Hersteller : Vishay | Rectifier Diode Switching 600V 2A 75ns Automotive AEC-Q101 2-Pin SMB T/R |
auf Bestellung 750 Stücke: Lieferzeit 14-21 Tag (e) |
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MURS160HE3_A/H | Hersteller : Vishay | Rectifier Diode Switching 600V 2A 75ns Automotive AEC-Q101 2-Pin SMB T/R |
auf Bestellung 2760 Stücke: Lieferzeit 14-21 Tag (e) |
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MURS160HE3_A/H | Hersteller : Vishay | Rectifier Diode Switching 600V 2A 75ns Automotive AEC-Q101 2-Pin SMB T/R |
auf Bestellung 2760 Stücke: Lieferzeit 14-21 Tag (e) |
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MURS160HE3_A/H | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 2A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Qualification: AEC-Q101 |
auf Bestellung 3750 Stücke: Lieferzeit 21-28 Tag (e) |
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MURS160HE3_A/H | Hersteller : Vishay General Semiconductor | Rectifiers 1A,600V,50ns SMB, UF Rect, SMD |
auf Bestellung 82569 Stücke: Lieferzeit 14-28 Tag (e) |
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MURS160HE3_A/H | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 2A DO214AA Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3842 Stücke: Lieferzeit 21-28 Tag (e) |
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MURS160HE3_A/H | Hersteller : Vishay | Rectifier Diode Switching 600V 2A 75ns Automotive 2-Pin SMB T/R |
Produkt ist nicht verfügbar |
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MURS160HE3_A/H | Hersteller : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMB; Ufmax: 1.05V; Ifsm: 35A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Case: SMB Max. forward voltage: 1.05V Max. forward impulse current: 35A Leakage current: 0.15mA Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MURS160HE3_A/H | Hersteller : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMB; Ufmax: 1.05V; Ifsm: 35A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Case: SMB Max. forward voltage: 1.05V Max. forward impulse current: 35A Leakage current: 0.15mA Kind of package: reel; tape |
Produkt ist nicht verfügbar |