MURT10020

MURT10020 GeneSiC Semiconductor


murt10005.pdf Hersteller: GeneSiC Semiconductor
Description: DIODE ARRAY GP 200V 50A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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Technische Details MURT10020 GeneSiC Semiconductor

Description: DIODE ARRAY GP 200V 50A 3TOWER, Packaging: Bulk, Package / Case: Three Tower, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 75 ns, Technology: Standard, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 50A, Supplier Device Package: Three Tower, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A, Current - Reverse Leakage @ Vr: 25 µA @ 50 V.

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MURT10020 MURT10020 Hersteller : GeneSiC Semiconductor murt10005_thru_murt10020r-1132897.pdf Rectifiers SI S-FST RECOV 3TWR 50-600V100A200P/141R
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