MV2N5114

MV2N5114 Microchip Technology


lds-0006.pdf Hersteller: Microchip Technology
Trans JFET P-CH 30V 3-Pin TO-18 Bag
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Technische Details MV2N5114 Microchip Technology

Description: JFET P-CH 30V TO18, Packaging: Bulk, Package / Case: TO-206AA, TO-18-3 Metal Can, Mounting Type: Through Hole, Operating Temperature: -65°C ~ 200°C (TJ), FET Type: P-Channel, Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V, Voltage - Breakdown (V(BR)GSS): 30 V, Supplier Device Package: TO-18 (TO-206AA), Grade: Military, Part Status: Active, Drain to Source Voltage (Vdss): 30 V, Power - Max: 500 mW, Resistance - RDS(On): 75 Ohms, Voltage - Cutoff (VGS off) @ Id: 10 V @ 1 nA, Current - Drain (Idss) @ Vds (Vgs=0): 90 mA @ 18 V, Qualification: MIL-PRF-19500.

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MV2N5114 MV2N5114 Hersteller : Microchip Technology 124387-lds-0006 Description: JFET P-CH 30V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 75 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 90 mA @ 18 V
Qualification: MIL-PRF-19500
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MV2N5114 MV2N5114 Hersteller : Microchip Technology mslws00545_1-2275543.pdf JFET JFET
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