auf Bestellung 790 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
88+ | 1.76 EUR |
98+ | 1.53 EUR |
99+ | 1.46 EUR |
111+ | 1.25 EUR |
250+ | 1.17 EUR |
500+ | 0.94 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NDS9945 ON Semiconductor
Description: MOSFET 2N-CH 60V 3.5A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 900mW, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 3.5A, Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 25V, Rds On (Max) @ Id, Vgs: 100mOhm @ 3.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.
Weitere Produktangebote NDS9945 nach Preis ab 0.94 EUR bis 4.19 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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NDS9945 | Hersteller : ON Semiconductor | Trans MOSFET N-CH 60V 3.5A 8-Pin SOIC T/R |
auf Bestellung 790 Stücke: Lieferzeit 14-21 Tag (e) |
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NDS9945 | Hersteller : onsemi |
Description: MOSFET 2N-CH 60V 3.5A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.5A Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 25V Rds On (Max) @ Id, Vgs: 100mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 3185 Stücke: Lieferzeit 21-28 Tag (e) |
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NDS9945 | Hersteller : onsemi / Fairchild | MOSFET Dl N-Ch Enhancement |
auf Bestellung 1765 Stücke: Lieferzeit 14-28 Tag (e) |
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NDS9945 | Hersteller : ON Semiconductor | Trans MOSFET N-CH 60V 3.5A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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NDS9945 | Hersteller : ON Semiconductor | Trans MOSFET N-CH 60V 3.5A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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NDS9945 | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; 2W; SO8 Power dissipation: 2W Mounting: SMD Kind of package: reel; tape Case: SO8 Drain-source voltage: 60V Drain current: 3.5A On-state resistance: 0.3Ω Type of transistor: N-MOSFET x2 Polarisation: unipolar Gate charge: 30nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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NDS9945 | Hersteller : onsemi |
Description: MOSFET 2N-CH 60V 3.5A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.5A Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 25V Rds On (Max) @ Id, Vgs: 100mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
Produkt ist nicht verfügbar |
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NDS9945 | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; 2W; SO8 Power dissipation: 2W Mounting: SMD Kind of package: reel; tape Case: SO8 Drain-source voltage: 60V Drain current: 3.5A On-state resistance: 0.3Ω Type of transistor: N-MOSFET x2 Polarisation: unipolar Gate charge: 30nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |