NDT3055L ON Semiconductor
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4000+ | 0.97 EUR |
| 8000+ | 0.86 EUR |
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Technische Details NDT3055L ON Semiconductor
Description: MOSFET N-CH 60V 4A SOT-223-4, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -65°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 100mOhm @ 4A, 10V, Power Dissipation (Max): 3W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: SOT-223-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 25 V.
Weitere Produktangebote NDT3055L nach Preis ab 0.62 EUR bis 2.44 EUR
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NDT3055L | Hersteller : ONSEMI |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 4A; 3W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 4A Power dissipation: 3W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1848 Stücke: Lieferzeit 7-14 Tag (e) |
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NDT3055L | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 4A; 3W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 4A Power dissipation: 3W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 1848 Stücke: Lieferzeit 14-21 Tag (e) |
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NDT3055L | Hersteller : onsemi |
Description: MOSFET N-CH 60V 4A SOT-223-4 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 4A, 10V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-223-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 25 V |
auf Bestellung 844 Stücke: Lieferzeit 21-28 Tag (e) |
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NDT3055L | Hersteller : onsemi / Fairchild |
MOSFET SOT-223 N-CH LOGIC |
auf Bestellung 23515 Stücke: Lieferzeit 14-28 Tag (e) |
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NDT3055L | Hersteller : ONSEMI |
Description: ONSEMI - NDT3055L - Leistungs-MOSFET, n-Kanal, 60 V, 4 A, 0.07 ohm, SOT-223, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.6V euEccn: NLR Verlustleistung: 3W Anzahl der Pins: 4Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.07ohm |
auf Bestellung 2836 Stücke: Lieferzeit 14-21 Tag (e) |
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NDT3055L | Hersteller : ONSEMI |
Description: ONSEMI - NDT3055L - Leistungs-MOSFET, n-Kanal, 60 V, 4 A, 0.07 ohm, SOT-223, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.6V euEccn: NLR Verlustleistung: 3W Anzahl der Pins: 4Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.07ohm |
auf Bestellung 2836 Stücke: Lieferzeit 14-21 Tag (e) |
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NDT3055L | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 4A 4-Pin(3+Tab) SOT-223 T/R |
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NDT3055L | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 4A 4-Pin(3+Tab) SOT-223 T/R |
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NDT3055L | Hersteller : onsemi |
Description: MOSFET N-CH 60V 4A SOT-223-4 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 4A, 10V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-223-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 25 V |
Produkt ist nicht verfügbar |