NE3515S02-T1D-A

NE3515S02-T1D-A Renesas Electronics Corporation


RNCCS03642-1.pdf?t.download=true&u=5oefqw Hersteller: Renesas Electronics Corporation
Description: RF MOSFET HFET 2V S02
Packaging: Bulk
Package / Case: 4-SMD, Flat Leads
Current Rating (Amps): 88mA
Frequency: 12GHz
Power - Output: 14dBm
Gain: 12.5dB
Technology: HFET
Noise Figure: 0.3dB
Supplier Device Package: S02
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
auf Bestellung 648214 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
417+1.71 EUR
Mindestbestellmenge: 417
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Technische Details NE3515S02-T1D-A Renesas Electronics Corporation

Description: RF MOSFET HFET 2V S02, Packaging: Bulk, Package / Case: 4-SMD, Flat Leads, Current Rating (Amps): 88mA, Frequency: 12GHz, Power - Output: 14dBm, Gain: 12.5dB, Technology: HFET, Noise Figure: 0.3dB, Supplier Device Package: S02, Voltage - Rated: 4 V, Voltage - Test: 2 V, Current - Test: 10 mA.