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NHDTC123JTR

NHDTC123JTR Nexperia

nhdtc123jt_143zt_114yt_ser.pdf Hersteller: Nexperia
Trans Digital BJT NPN 80V 100mA 350mW Automotive AEC-Q101 3-Pin SOT-23 T/R
auf Bestellung 27000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
5292+0.029 EUR
Mindestbestellmenge: 5292
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Technische Details NHDTC123JTR Nexperia

Description: TRANS PREBIAS NPN 80V TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V, Supplier Device Package: TO-236AB, Grade: Automotive, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 250 mW, Frequency - Transition: 170 MHz, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 47 kOhms, Qualification: AEC-Q101.

Weitere Produktangebote NHDTC123JTR nach Preis ab 0.042 EUR bis 0.36 EUR

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Preis ohne MwSt
NHDTC123JTR NHDTC123JTR Hersteller : Nexperia USA Inc. NHDTC123JT_143ZT_114YT_SER.pdf Description: TRANS PREBIAS NPN 80V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.059 EUR
Mindestbestellmenge: 3000
NHDTC123JTR NHDTC123JTR Hersteller : Nexperia USA Inc. NHDTC123JT_143ZT_114YT_SER.pdf Description: TRANS PREBIAS NPN 80V TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 9177 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
50+0.35 EUR
73+ 0.24 EUR
151+ 0.12 EUR
500+ 0.098 EUR
1000+ 0.068 EUR
Mindestbestellmenge: 50
NHDTC123JTR NHDTC123JTR Hersteller : Nexperia NHDTC123JT_143ZT_114YT_SER-1880106.pdf Bipolar Transistors - Pre-Biased NHDTC123JT/SOT23/TO-236AB
auf Bestellung 6208 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+0.36 EUR
12+ 0.25 EUR
100+ 0.1 EUR
1000+ 0.07 EUR
3000+ 0.056 EUR
9000+ 0.046 EUR
24000+ 0.042 EUR
Mindestbestellmenge: 8
NHDTC123JTR NHDTC123JTR Hersteller : Nexperia nhdtc123jt_143zt_114yt_ser.pdf Trans Digital BJT NPN 80V 100mA 350mW Automotive AEC-Q101 3-Pin SOT-23 T/R
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