Produkte > NEXPERIA > NHUMB1F
NHUMB1F

NHUMB1F Nexperia


NHUMB11_1_2_SER-1948290.pdf Hersteller: Nexperia
Bipolar Transistors - BJT NHUMB1/SOT363/SC-88
auf Bestellung 10000 Stücke:

Lieferzeit 168-182 Tag (e)
Anzahl Preis ohne MwSt
55+0.96 EUR
66+ 0.79 EUR
124+ 0.42 EUR
500+ 0.28 EUR
1000+ 0.19 EUR
2500+ 0.15 EUR
10000+ 0.12 EUR
Mindestbestellmenge: 55
Produktrezensionen
Produktbewertung abgeben

Technische Details NHUMB1F Nexperia

Description: TRANS PREBIAS 2PNP 80V 6TSSOP, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 PNP - Pre-Biased (Dual), Power - Max: 235mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 80V, Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V, Frequency - Transition: 150MHz, Resistor - Base (R1): 22kOhms, Resistor - Emitter Base (R2): 22kOhms, Supplier Device Package: 6-TSSOP.

Weitere Produktangebote NHUMB1F

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
NHUMB1F Hersteller : Nexperia USA Inc. NHUMB11_1_2_SER.pdf Description: TRANS PREBIAS 2PNP 80V 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 235mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 150MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: 6-TSSOP
Produkt ist nicht verfügbar
NHUMB1F Hersteller : Nexperia USA Inc. NHUMB11_1_2_SER.pdf Description: TRANS PREBIAS 2PNP 80V 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 235mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 150MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: 6-TSSOP
Produkt ist nicht verfügbar