NP80N055MDG-S18-AY NEC Corporation
Hersteller: NEC CorporationDescription: MOSFET N-CH 55V 80A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 40A, 10V
Power Dissipation (Max): 1.8W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
auf Bestellung 6350 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 161+ | 4.86 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NP80N055MDG-S18-AY NEC Corporation
Description: MOSFET N-CH 55V 80A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 6.9mOhm @ 40A, 10V, Power Dissipation (Max): 1.8W (Ta), 115W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-220, Part Status: Obsolete, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V.