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NP82N04NDG-S18-AY NEC Corporation


RNCCS18698-1.pdf?t.download=true&u=5oefqw Hersteller: NEC Corporation
Description: MOSFET N-CH 40V 82A 3LDPAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 41A, 10V
Power Dissipation (Max): 1.8W (Ta), 143W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 3-LDPAK
Part Status: Obsolete
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
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Technische Details NP82N04NDG-S18-AY NEC Corporation

Description: MOSFET N-CH 40V 82A 3LDPAK, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Mounting Type: Through Hole, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 82A (Tc), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 41A, 10V, Power Dissipation (Max): 1.8W (Ta), 143W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 3-LDPAK, Part Status: Obsolete, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V.