Technische Details NSB8DT-E3/45 Vishay
Description: DIODE GEN PURP 200V 8A TO263AB, Packaging: Tube, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 55pF @ 4V, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-263AB (D²PAK), Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A, Current - Reverse Leakage @ Vr: 10 µA @ 200 V.
Weitere Produktangebote NSB8DT-E3/45
| Foto | Bezeichnung | Hersteller | Beschreibung |
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NSB8DT-E3/45 | Hersteller : Vishay |
 Rectifier Diode 200V 8A 3-Pin(2+Tab) TO-263AB Tube |
Produkt ist nicht verfügbar |
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NSB8DT-E3/45 | Hersteller : Vishay |
Rectifier Diode 200V 8A 3-Pin(2+Tab) TO-263AB Tube |
Produkt ist nicht verfügbar |
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NSB8DT-E3/45 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 8A TO263AB Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 55pF @ 4V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
Produkt ist nicht verfügbar |
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NSB8DT-E3/45 | Hersteller : Vishay General Semiconductor |
Rectifiers 200 Volt 8.0 Amp 125 Amp IFSM |
Produkt ist nicht verfügbar |