auf Bestellung 22680 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 32+ | 1.67 EUR |
| 35+ | 1.49 EUR |
| 100+ | 1.19 EUR |
| 500+ | 1.07 EUR |
| 1000+ | 0.95 EUR |
| 2500+ | 0.81 EUR |
| 5000+ | 0.77 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NSS40301MDR2G onsemi
Description: TRANS 2NPN 40V 3A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Transistor Type: 2 NPN (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 653mW, Current - Collector (Ic) (Max): 3A, Voltage - Collector Emitter Breakdown (Max): 40V, Vce Saturation (Max) @ Ib, Ic: 115mV @ 200mA, 2A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V, Frequency - Transition: 100MHz, Supplier Device Package: 8-SOIC, Part Status: Active.
Weitere Produktangebote NSS40301MDR2G nach Preis ab 0.95 EUR bis 2.21 EUR
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NSS40301MDR2G | Hersteller : onsemi |
 Description: TRANS 2NPN 40V 3A 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 653mW Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 115mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V Frequency - Transition: 100MHz Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 2527 Stücke: Lieferzeit 21-28 Tag (e) |
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auf Bestellung 8500 Stücke: Lieferzeit 21-28 Tag (e) |
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NSS40301MDR2G | Hersteller : ON Semiconductor |
Trans GP BJT NPN 40V 3A 783mW Automotive 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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NSS40301MDR2G | Hersteller : ON Semiconductor |
Trans GP BJT NPN 40V 3A 783mW Automotive 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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NSS40301MDR2G | Hersteller : onsemi |
Description: TRANS 2NPN 40V 3A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 653mW Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 115mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V Frequency - Transition: 100MHz Supplier Device Package: 8-SOIC Part Status: Active |
Produkt ist nicht verfügbar |