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NTD4906N-1G

NTD4906N-1G onsemi

ntd4906n-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 30V 10.3A/54A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Power Dissipation (Max): 1.38W (Ta), 37.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: I-PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 15 V
auf Bestellung 17450 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1401+0.5 EUR
Mindestbestellmenge: 1401
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Technische Details NTD4906N-1G onsemi

Description: MOSFET N-CH 30V 10.3A/54A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 54A (Tc), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V, Power Dissipation (Max): 1.38W (Ta), 37.5W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: I-PAK, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 15 V.

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NTD4906N-1G Hersteller : ON Semiconductor ntd4906n-d.pdf
auf Bestellung 3 Stücke:
Lieferzeit 21-28 Tag (e)
NTD4906N-1G Hersteller : ONSEMI ONSM-S-A0013300381-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - NTD4906N-1G - NTD4906N-1G, SINGLE MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 17450 Stücke:
Lieferzeit 14-21 Tag (e)
NTD4906N-1G NTD4906N-1G Hersteller : ON Semiconductor ntd4906n-d.pdf Trans MOSFET N-CH 30V 14A 3-Pin(3+Tab) IPAK Tube
Produkt ist nicht verfügbar
NTD4906N-1G NTD4906N-1G Hersteller : onsemi ntd4906n-d.pdf Description: MOSFET N-CH 30V 10.3A/54A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Power Dissipation (Max): 1.38W (Ta), 37.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: I-PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 15 V
Produkt ist nicht verfügbar