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NTD4906NA-35G

NTD4906NA-35G onsemi


Hersteller: onsemi
Description: MOSFET N-CH 30V 10.3A/54A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: I-PAK
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 15 V
auf Bestellung 22125 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1902+0.38 EUR
Mindestbestellmenge: 1902
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Technische Details NTD4906NA-35G onsemi

Description: MOSFET N-CH 30V 10.3A/54A IPAK, Packaging: Tube, Package / Case: TO-251-3 Stub Leads, IPak, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 54A (Tc), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: I-PAK, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 15 V.

Weitere Produktangebote NTD4906NA-35G

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
NTD4906NA-35G Hersteller : ONSEMI ikCxKF2K2td7ZTjfHkT7Ag Description: ONSEMI - NTD4906NA-35G - NTD4906NA - MOSFET N-CH 30V 54A SGL IPAK
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 22125 Stücke:
Lieferzeit 14-21 Tag (e)
NTD4906NA-35G NTD4906NA-35G Hersteller : onsemi Description: MOSFET N-CH 30V 10.3A/54A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: I-PAK
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 15 V
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