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NTD4906NT4G


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Technische Details NTD4906NT4G

Description: MOSFET N-CH 30V 10.3A/54A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 54A (Tc), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V, Power Dissipation (Max): 1.38W (Ta), 37.5W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 15 V.

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NTD4906NT4G NTD4906NT4G Hersteller : ON Semiconductor ntd4906n-d.pdf Trans MOSFET N-CH 30V 14A 3-Pin(2+Tab) DPAK T/R
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NTD4906NT4G NTD4906NT4G Hersteller : onsemi ntd4906n-d.pdf Description: MOSFET N-CH 30V 10.3A/54A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Power Dissipation (Max): 1.38W (Ta), 37.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 15 V
Produkt ist nicht verfügbar