NTD80N02-1G onsemi
Hersteller: onsemi
Description: MOSFET N-CH 24V 80A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 80A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: I-PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V
Description: MOSFET N-CH 24V 80A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 80A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: I-PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V
auf Bestellung 58655 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1110+ | 0.66 EUR |
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Technische Details NTD80N02-1G onsemi
Description: MOSFET N-CH 24V 80A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 5.8mOhm @ 80A, 10V, Power Dissipation (Max): 75W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: I-PAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 24 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V.
Weitere Produktangebote NTD80N02-1G
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Verfügbarkeit |
Preis ohne MwSt |
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NTD80N02-1G | Hersteller : ON | 09+ |
auf Bestellung 158 Stücke: Lieferzeit 21-28 Tag (e) |
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NTD80N02-1G | Hersteller : ON |
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NTD80N02-1G | Hersteller : ONSEMI |
Description: ONSEMI - NTD80N02-1G - NTD80N02-1G, SINGLE MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 58655 Stücke: Lieferzeit 14-21 Tag (e) |
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NTD80N02-1G | Hersteller : onsemi |
Description: MOSFET N-CH 24V 80A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 80A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: I-PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V |
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