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NTD80N02T4

NTD80N02T4 onsemi

ntd80n02-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 24V 80A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 80A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V
auf Bestellung 25023 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1902+0.39 EUR
Mindestbestellmenge: 1902
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Technische Details NTD80N02T4 onsemi

Description: MOSFET N-CH 24V 80A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 5.8mOhm @ 80A, 10V, Power Dissipation (Max): 75W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: DPAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 24 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V.

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NTD80N02T4 Hersteller : ON ntd80n02-d.pdf 0335+
auf Bestellung 690 Stücke:
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auf Bestellung 7090 Stücke:
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NTD80N02T4 Hersteller : ONSEMI ONSMS31793-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - NTD80N02T4 - NTD80N02T4, SINGLE MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 25023 Stücke:
Lieferzeit 14-21 Tag (e)
NTD80N02T4 NTD80N02T4 Hersteller : onsemi ntd80n02-d.pdf Description: MOSFET N-CH 24V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 80A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V
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