NTE109

NTE109 NTE Electronics, Inc


nte109.pdf Hersteller: NTE Electronics, Inc
Description: D-GE-GEN PURP 75V
auf Bestellung 1372 Stücke:

Lieferzeit 21-28 Tag (e)
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Technische Details NTE109 NTE Electronics, Inc

Category: THT universal diodes, Description: Diode: rectifying; THT; 100V; 40mA; Ifsm: 500mA; DO7; Ufmax: 1V, Type of diode: rectifying, Mounting: THT, Max. off-state voltage: 100V, Load current: 40mA, Semiconductor structure: single diode, Features of semiconductor devices: fast switching; germanium diode (Ge), Capacitance: 0.8pF, Case: DO7, Max. forward voltage: 1V, Max. forward impulse current: 0.5A, Leakage current: 0.1mA, Anzahl je Verpackung: 1 Stücke.

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NTE109 NTE109 Hersteller : NTE Electronics nte109_v2.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 40mA; Ifsm: 500mA; DO7; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 40mA
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; germanium diode (Ge)
Capacitance: 0.8pF
Case: DO7
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Leakage current: 0.1mA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTE109 NTE109 Hersteller : NTE Electronics nte109_v2.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 40mA; Ifsm: 500mA; DO7; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 40mA
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; germanium diode (Ge)
Capacitance: 0.8pF
Case: DO7
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Leakage current: 0.1mA
Produkt ist nicht verfügbar