NTE2371

NTE2371 NTE Electronics


nte2371.pdf Hersteller: NTE Electronics
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W; TO220
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Pulsed drain current: -72A
Power dissipation: 150W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 17 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
7+11.43 EUR
9+ 8.31 EUR
10+ 7.86 EUR
Mindestbestellmenge: 7
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Technische Details NTE2371 NTE Electronics

Description: MOSFET P-CHANNEL 100V 19A TO220, Packaging: Bag, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 11A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V.

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NTE2371 NTE2371 Hersteller : NTE Electronics nte2371.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W; TO220
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Pulsed drain current: -72A
Power dissipation: 150W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Kind of channel: enhanced
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
7+11.43 EUR
9+ 8.31 EUR
10+ 7.86 EUR
Mindestbestellmenge: 7
NTE2371 NTE2371 Hersteller : NTE Electronics, Inc nte2371.pdf Description: MOSFET P-CHANNEL 100V 19A TO220
Packaging: Bag
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 11A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 193 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+20.96 EUR
10+ 19.92 EUR
20+ 18.85 EUR
50+ 17.81 EUR
100+ 17.39 EUR
Mindestbestellmenge: 2