NTE2377 NTE Electronics
Hersteller: NTE ElectronicsCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 8A; Idm: 36A; 150W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 8A
Pulsed drain current: 36A
Power dissipation: 150W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 1.6Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
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Technische Details NTE2377 NTE Electronics
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 900V; 8A; Idm: 36A; 150W; TO3P, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 900V, Drain current: 8A, Pulsed drain current: 36A, Power dissipation: 150W, Case: TO3P, Gate-source voltage: ±30V, On-state resistance: 1.6Ω, Mounting: THT, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
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NTE2377 | Hersteller : NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 8A; Idm: 36A; 150W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 8A Pulsed drain current: 36A Power dissipation: 150W Case: TO3P Gate-source voltage: ±30V On-state resistance: 1.6Ω Mounting: THT Kind of channel: enhanced |
Produkt ist nicht verfügbar |