NTE2378 NTE Electronics, Inc
Hersteller: NTE Electronics, IncDescription: MOSFET N-CHANNEL 900V 5A TO3P
Packaging: Bag
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 2A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 20 V
auf Bestellung 104 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 18.15 EUR |
| 10+ | 17.24 EUR |
| 20+ | 16.33 EUR |
| 50+ | 15.42 EUR |
| 100+ | 15.05 EUR |
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Technische Details NTE2378 NTE Electronics, Inc
Description: MOSFET N-CHANNEL 900V 5A TO3P, Packaging: Bag, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Rds On (Max) @ Id, Vgs: 3.6Ohm @ 2A, 10V, Power Dissipation (Max): 120W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: TO-3P, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 20 V.
Weitere Produktangebote NTE2378
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| NTE2378 | Hersteller : NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 5A; Idm: 10A; 120W; TO3P Mounting: THT Power dissipation: 120W Polarisation: unipolar Case: TO3P Kind of channel: enhanced Gate-source voltage: ±30V Drain current: 5A Pulsed drain current: 10A On-state resistance: 3.6Ω Type of transistor: N-MOSFET Drain-source voltage: 900V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NTE2378 | Hersteller : NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 5A; Idm: 10A; 120W; TO3P Mounting: THT Power dissipation: 120W Polarisation: unipolar Case: TO3P Kind of channel: enhanced Gate-source voltage: ±30V Drain current: 5A Pulsed drain current: 10A On-state resistance: 3.6Ω Type of transistor: N-MOSFET Drain-source voltage: 900V |
Produkt ist nicht verfügbar |