NTE2384 NTE Electronics, Inc
Hersteller: NTE Electronics, IncDescription: MOSFET N-CHANNEL 900V 6A TO3
Packaging: Bag
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
auf Bestellung 54 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 132.18 EUR |
| 10+ | 125.58 EUR |
| 20+ | 118.98 EUR |
| 50+ | 112.35 EUR |
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Technische Details NTE2384 NTE Electronics, Inc
Description: MOSFET N-CHANNEL 900V 6A TO3, Packaging: Bag, Package / Case: TO-204AA, TO-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3A, 10V, Power Dissipation (Max): 180W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V.
Weitere Produktangebote NTE2384 nach Preis ab 99.56 EUR bis 104.29 EUR
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| NTE2384 | Hersteller : NTE Electronics, Inc. |
Trans MOSFET N-CH 800V 6A 3-Pin(2+Tab) |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTE2384 | Hersteller : NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 6A; Idm: 24A; 180W; TO3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 6A Pulsed drain current: 24A Power dissipation: 180W Case: TO3 Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: THT Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NTE2384 | Hersteller : NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 6A; Idm: 24A; 180W; TO3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 6A Pulsed drain current: 24A Power dissipation: 180W Case: TO3 Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: THT Kind of channel: enhanced |
Produkt ist nicht verfügbar |