NTE2388

NTE2388 NTE Electronics


nte2388.pdf Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220
Mounting: THT
Case: TO220
Power dissipation: 125W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 72A
Drain-source voltage: 200V
Drain current: 11A
On-state resistance: 0.18Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 49 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
10+7.76 EUR
13+ 5.75 EUR
14+ 5.43 EUR
Mindestbestellmenge: 10
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Technische Details NTE2388 NTE Electronics

Description: MOSFET N-CHANNEL 200V 18A TO220, Packaging: Bag, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V.

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NTE2388 NTE2388 Hersteller : NTE Electronics nte2388.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220
Mounting: THT
Case: TO220
Power dissipation: 125W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 72A
Drain-source voltage: 200V
Drain current: 11A
On-state resistance: 0.18Ω
Type of transistor: N-MOSFET
auf Bestellung 49 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
10+7.76 EUR
13+ 5.75 EUR
14+ 5.43 EUR
Mindestbestellmenge: 10
NTE2388 NTE2388 Hersteller : NTE Electronics, Inc nte2388.pdf Description: MOSFET N-CHANNEL 200V 18A TO220
Packaging: Bag
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
auf Bestellung 1162 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+20.1 EUR
10+ 19.08 EUR
20+ 18.1 EUR
50+ 17.08 EUR
100+ 16.69 EUR
Mindestbestellmenge: 2
NTE2388 NTE2388 Hersteller : NTE Electronics, Inc. nte2388.pdf Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220
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