NTE2391 NTE Electronics
Hersteller: NTE Electronics
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -29A; Idm: -140A; 200W; TO220
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -29A
Pulsed drain current: -140A
Power dissipation: 200W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -29A; Idm: -140A; 200W; TO220
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -29A
Pulsed drain current: -140A
Power dissipation: 200W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details NTE2391 NTE Electronics
Category: THT P channel transistors, Description: Transistor: P-MOSFET; unipolar; -100V; -29A; Idm: -140A; 200W; TO220, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -100V, Drain current: -29A, Pulsed drain current: -140A, Power dissipation: 200W, Case: TO220, Gate-source voltage: ±20V, On-state resistance: 60mΩ, Mounting: THT, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote NTE2391
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
NTE2391 | Hersteller : NTE Electronics |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -29A; Idm: -140A; 200W; TO220 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -29A Pulsed drain current: -140A Power dissipation: 200W Case: TO220 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: THT Kind of channel: enhanced |
Produkt ist nicht verfügbar |