NTE2392 NTE Electronics
Hersteller: NTE ElectronicsCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; Idm: 160A; 150W; TO3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Pulsed drain current: 160A
Power dissipation: 150W
Case: TO3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 35.75 EUR |
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Technische Details NTE2392 NTE Electronics
Description: MOSFET N-CHANNEL 100V 40A TO3, Packaging: Bag, Package / Case: TO-204AA, TO-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 55mOhm @ 20A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V.
Weitere Produktangebote NTE2392 nach Preis ab 35.75 EUR bis 85.18 EUR
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NTE2392 | Hersteller : NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 25A; Idm: 160A; 150W; TO3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 25A Pulsed drain current: 160A Power dissipation: 150W Case: TO3 Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: THT Kind of channel: enhanced |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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NTE2392 | Hersteller : NTE Electronics, Inc |
Description: MOSFET N-CHANNEL 100V 40A TO3 Packaging: Bag Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 20A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V |
auf Bestellung 877 Stücke: Lieferzeit 21-28 Tag (e) |
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NTE2392 | Hersteller : NTE Electronics, Inc. |
Trans MOSFET N-CH 100V 40A 3-Pin(2+Tab) TO-3 |
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