NTE2393 NTE Electronics, Inc
Hersteller: NTE Electronics, IncDescription: MOSFET N-CHANNEL 500V 10A TO3P
Packaging: Bag
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 670mOhm @ 5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
auf Bestellung 108 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 37.75 EUR |
| 10+ | 35.85 EUR |
| 20+ | 33.98 EUR |
| 50+ | 32.08 EUR |
| 100+ | 31.33 EUR |
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Technische Details NTE2393 NTE Electronics, Inc
Description: MOSFET N-CHANNEL 500V 10A TO3P, Packaging: Bag, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 670mOhm @ 5A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-3P, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V.
Weitere Produktangebote NTE2393
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| NTE2393 | Hersteller : NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 10A; 125W; TO3P Drain-source voltage: 500V Drain current: 10A On-state resistance: 0.7Ω Type of transistor: N-MOSFET Power dissipation: 125W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Mounting: THT Case: TO3P Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NTE2393 | Hersteller : NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 10A; 125W; TO3P Drain-source voltage: 500V Drain current: 10A On-state resistance: 0.7Ω Type of transistor: N-MOSFET Power dissipation: 125W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Mounting: THT Case: TO3P |
Produkt ist nicht verfügbar |