NTE2394

NTE2394 NTE Electronics, Inc


nte2394.pdf Hersteller: NTE Electronics, Inc
Description: MOSFET N-CHANNEL 500V 14A TO3P
Packaging: Bag
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 7.9A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
auf Bestellung 19 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+34.06 EUR
10+ 32.37 EUR
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Technische Details NTE2394 NTE Electronics, Inc

Description: MOSFET N-CHANNEL 500V 14A TO3P, Packaging: Bag, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 400mOhm @ 7.9A, 10V, Power Dissipation (Max): 180W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-3P, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V.

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NTE2394 NTE2394 Hersteller : NTE Electronics nte2394.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.8A; Idm: 56A; 180W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.8A
Pulsed drain current: 56A
Power dissipation: 180W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTE2394 NTE2394 Hersteller : NTE Electronics nte2394.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.8A; Idm: 56A; 180W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.8A
Pulsed drain current: 56A
Power dissipation: 180W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Kind of channel: enhanced
Produkt ist nicht verfügbar