NTE2396A

NTE2396A NTE Electronics


nte2396A.pdf Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; Idm: 110A; 130W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Pulsed drain current: 110A
Power dissipation: 130W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 57 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
27+2.73 EUR
30+ 2.45 EUR
38+ 1.93 EUR
40+ 1.83 EUR
Mindestbestellmenge: 27
Produktrezensionen
Produktbewertung abgeben

Technische Details NTE2396A NTE Electronics

Description: MOSFET N-CHANNEL 100V 33A TO220, Packaging: Bag, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V, Power Dissipation (Max): 130W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V.

Weitere Produktangebote NTE2396A nach Preis ab 1.83 EUR bis 4.52 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
NTE2396A NTE2396A Hersteller : NTE Electronics nte2396A.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; Idm: 110A; 130W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Pulsed drain current: 110A
Power dissipation: 130W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of channel: enhanced
auf Bestellung 57 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
27+2.73 EUR
30+ 2.45 EUR
38+ 1.93 EUR
40+ 1.83 EUR
Mindestbestellmenge: 27
NTE2396A NTE2396A Hersteller : NTE Electronics, Inc nte2396A.pdf Description: MOSFET N-CHANNEL 100V 33A TO220
Packaging: Bag
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
auf Bestellung 1280 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.52 EUR
10+ 4.29 EUR
20+ 4.08 EUR
50+ 3.85 EUR
100+ 3.74 EUR
Mindestbestellmenge: 6