NTE2398 NTE Electronics, Inc
Hersteller: NTE Electronics, IncDescription: MOSFET N-CHANNEL 500V 4.5A TO220
Packaging: Bag
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.7A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V
auf Bestellung 228 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 17.45 EUR |
| 10+ | 16.56 EUR |
| 20+ | 15.7 EUR |
| 50+ | 14.82 EUR |
| 100+ | 14.48 EUR |
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Technische Details NTE2398 NTE Electronics, Inc
Description: MOSFET N-CHANNEL 500V 4.5A TO220, Packaging: Bag, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.7A, 10V, Power Dissipation (Max): 74W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V.
Weitere Produktangebote NTE2398 nach Preis ab 11.35 EUR bis 11.35 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| NTE2398 | Hersteller : NTE Electronics, Inc. |
Trans MOSFET N-CH 500V 4.5A 3-Pin(3+Tab) TO-220 |
auf Bestellung 110 Stücke: Lieferzeit 14-21 Tag (e) |
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NTE2398 | Hersteller : NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 18A; 74W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.9A Pulsed drain current: 18A Power dissipation: 74W Case: TO220 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: THT Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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NTE2398 | Hersteller : NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 18A; 74W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.9A Pulsed drain current: 18A Power dissipation: 74W Case: TO220 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: THT Kind of channel: enhanced |
Produkt ist nicht verfügbar |