NTE2910 NTE Electronics, Inc
Hersteller: NTE Electronics, IncDescription: JFET N-CH 40V TO18
Packaging: Bag
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-18
Part Status: Active
Drain to Source Voltage (Vdss): 40 V
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
auf Bestellung 266 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 20.67 EUR |
| 10+ | 19.63 EUR |
| 20+ | 18.62 EUR |
| 50+ | 17.58 EUR |
| 100+ | 17.16 EUR |
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Technische Details NTE2910 NTE Electronics, Inc
Description: JFET N-CH 40V TO18, Packaging: Bag, Package / Case: TO-206AA, TO-18-3 Metal Can, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 200°C (TJ), FET Type: N-Channel, Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V, Voltage - Breakdown (V(BR)GSS): 40 V, Supplier Device Package: TO-18, Part Status: Active, Drain to Source Voltage (Vdss): 40 V, Resistance - RDS(On): 100 Ohms, Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA, Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V.
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NTE2910 | Hersteller : NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-JFET; unipolar; 30mA; 1.8W; TO18; Igt: 50mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 30mA Power dissipation: 1.8W Case: TO18 Gate-source voltage: -40V Mounting: THT Kind of package: bulk Gate current: 50mA Anzahl je Verpackung: 1 Stücke |
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NTE2910 | Hersteller : NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-JFET; unipolar; 30mA; 1.8W; TO18; Igt: 50mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 30mA Power dissipation: 1.8W Case: TO18 Gate-source voltage: -40V Mounting: THT Kind of package: bulk Gate current: 50mA |
Produkt ist nicht verfügbar |