NTE2911 NTE Electronics
Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 48A; 40W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 40W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 48A; 40W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 40W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
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Technische Details NTE2911 NTE Electronics
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 48A; 40W; TO220F, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 500V, Drain current: 12A, Pulsed drain current: 48A, Power dissipation: 40W, Case: TO220F, Gate-source voltage: ±30V, On-state resistance: 0.4Ω, Mounting: THT, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
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NTE2911 | Hersteller : NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 48A; 40W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Pulsed drain current: 48A Power dissipation: 40W Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.4Ω Mounting: THT Kind of channel: enhanced |
Produkt ist nicht verfügbar |