NTE2913 NTE Electronics

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 55V; 80A; Idm: 390A; 200W; TO247, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 55V, Drain current: 80A, Pulsed drain current: 390A, Power dissipation: 200W, Case: TO247, Gate-source voltage: ±20V, On-state resistance: 8mΩ, Mounting: THT, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.