NTE2915 NTE Electronics
Hersteller: NTE ElectronicsCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 124A; 200W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 21A
Pulsed drain current: 124A
Power dissipation: 200W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
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Technische Details NTE2915 NTE Electronics
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 124A; 200W; TO220, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 200V, Drain current: 21A, Pulsed drain current: 124A, Power dissipation: 200W, Case: TO220, Gate-source voltage: ±30V, On-state resistance: 82mΩ, Mounting: THT, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
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NTE2915 | Hersteller : NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 124A; 200W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 21A Pulsed drain current: 124A Power dissipation: 200W Case: TO220 Gate-source voltage: ±30V On-state resistance: 82mΩ Mounting: THT Kind of channel: enhanced |
Produkt ist nicht verfügbar |