NTE2918 NTE Electronics

Category: THT P channel transistors, Description: Transistor: P-MOSFET; unipolar; -55V; -22A; Idm: -110A; 110W; TO220, Mounting: THT, Case: TO220, Power dissipation: 110W, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: -110A, Drain-source voltage: -55V, Drain current: -22A, On-state resistance: 60mΩ, Type of transistor: P-MOSFET, Polarisation: unipolar, Anzahl je Verpackung: 1 Stücke.