NTE2921 NTE Electronics
Hersteller: NTE ElectronicsCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 9.7A; Idm: 60A; 150W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 9.7A
Pulsed drain current: 60A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
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Technische Details NTE2921 NTE Electronics
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 250V; 9.7A; Idm: 60A; 150W; TO247, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 250V, Drain current: 9.7A, Pulsed drain current: 60A, Power dissipation: 150W, Case: TO247, Gate-source voltage: ±20V, On-state resistance: 0.28Ω, Mounting: THT, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| NTE2921 | Hersteller : NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 9.7A; Idm: 60A; 150W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 9.7A Pulsed drain current: 60A Power dissipation: 150W Case: TO247 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Kind of channel: enhanced |
Produkt ist nicht verfügbar |