NTE2922 NTE Electronics, Inc
Hersteller: NTE Electronics, Inc
Description: MOSFET N-CHANNEL 400V 16A TO3P
Packaging: Bag
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 8.9A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Description: MOSFET N-CHANNEL 400V 16A TO3P
Packaging: Bag
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 8.9A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
auf Bestellung 736 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 19.15 EUR |
10+ | 18.2 EUR |
20+ | 17.23 EUR |
50+ | 16.28 EUR |
100+ | 15.89 EUR |
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Technische Details NTE2922 NTE Electronics, Inc
Description: MOSFET N-CHANNEL 400V 16A TO3P, Packaging: Bag, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 300mOhm @ 8.9A, 10V, Power Dissipation (Max): 180W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-3P, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 400 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V.
Weitere Produktangebote NTE2922
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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NTE2922 | Hersteller : NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 64A; 180W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 10A Pulsed drain current: 64A Power dissipation: 180W Case: TO3P Gate-source voltage: ±20V On-state resistance: 0.3Ω Mounting: THT Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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NTE2922 | Hersteller : NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 64A; 180W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 10A Pulsed drain current: 64A Power dissipation: 180W Case: TO3P Gate-source voltage: ±20V On-state resistance: 0.3Ω Mounting: THT Kind of channel: enhanced |
Produkt ist nicht verfügbar |