NTE2925 NTE Electronics

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 800V; 6A; Idm: 18A; 45W; TO220F, Mounting: THT, Drain-source voltage: 800V, Drain current: 6A, On-state resistance: 1.35Ω, Type of transistor: N-MOSFET, Power dissipation: 45W, Polarisation: unipolar, Features of semiconductor devices: ESD protected gate, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 18A, Case: TO220F, Anzahl je Verpackung: 1 Stücke.