NTE2926 NTE Electronics
Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 160V; 7A; 100W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 160V
Drain current: 7A
Power dissipation: 100W
Case: TO3PN
Gate-source voltage: ±15V
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 160V; 7A; 100W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 160V
Drain current: 7A
Power dissipation: 100W
Case: TO3PN
Gate-source voltage: ±15V
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
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Technische Details NTE2926 NTE Electronics
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 160V; 7A; 100W; TO3PN, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 160V, Drain current: 7A, Power dissipation: 100W, Case: TO3PN, Gate-source voltage: ±15V, Mounting: THT, Kind of package: tube, Kind of channel: enhanced, Features of semiconductor devices: ESD protected gate, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote NTE2926
Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis ohne MwSt |
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NTE2926 | Hersteller : NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 160V; 7A; 100W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 160V Drain current: 7A Power dissipation: 100W Case: TO3PN Gate-source voltage: ±15V Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |