NTE2929 NTE Electronics
Hersteller: NTE ElectronicsCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5A; Idm: 15A; 45W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5A
Pulsed drain current: 15A
Power dissipation: 45W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 29 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 9.95 EUR |
| 10+ | 7.28 EUR |
| 11+ | 6.88 EUR |
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Technische Details NTE2929 NTE Electronics
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 900V; 5A; Idm: 15A; 45W; TO220F, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 900V, Drain current: 5A, Pulsed drain current: 15A, Power dissipation: 45W, Case: TO220F, Gate-source voltage: ±30V, On-state resistance: 2.3Ω, Mounting: THT, Kind of channel: enhanced, Features of semiconductor devices: ESD protected gate, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote NTE2929 nach Preis ab 6.88 EUR bis 9.95 EUR
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NTE2929 | Hersteller : NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 5A; Idm: 15A; 45W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 5A Pulsed drain current: 15A Power dissipation: 45W Case: TO220F Gate-source voltage: ±30V On-state resistance: 2.3Ω Mounting: THT Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
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