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NTE2930

NTE2930 NTE Electronics, Inc

nte2930.pdf Hersteller: NTE Electronics, Inc
Description: MOSFET N-CHANNEL 100V 31A TO3PML
Packaging: Bag
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 15.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PML
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 25 V
auf Bestellung 364 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+22.85 EUR
10+ 21.71 EUR
20+ 20.57 EUR
50+ 19.42 EUR
100+ 18.98 EUR
Mindestbestellmenge: 2
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Technische Details NTE2930 NTE Electronics, Inc

Description: MOSFET N-CHANNEL 100V 31A TO3PML, Packaging: Bag, Package / Case: TO-3P-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31A (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 15.5A, 10V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-3PML, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 25 V.

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NTE2930 Hersteller : NTE Electronics nte2930.pdf NTE2930 THT N channel transistors
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