NTE2932

NTE2932 NTE Electronics, Inc


nte2932.pdf Hersteller: NTE Electronics, Inc
Description: MOSFET N-CH 200V 21.3A TO3PML
Packaging: Bag
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.3A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 10.65A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PML
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
auf Bestellung 488 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+20.62 EUR
10+ 19.58 EUR
20+ 18.56 EUR
50+ 17.52 EUR
100+ 17.11 EUR
Mindestbestellmenge: 2
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Technische Details NTE2932 NTE Electronics, Inc

Description: MOSFET N-CH 200V 21.3A TO3PML, Packaging: Bag, Package / Case: TO-3P-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21.3A (Tc), Rds On (Max) @ Id, Vgs: 85mOhm @ 10.65A, 10V, Power Dissipation (Max): 90W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-3PML, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V.

Weitere Produktangebote NTE2932

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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NTE2932 Hersteller : NTE Electronics nte2932.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 13.5A; Idm: 130A; 90W; TO3PML
Mounting: THT
Case: TO3PML
Drain-source voltage: 200V
Drain current: 13.5A
On-state resistance: 85mΩ
Type of transistor: N-MOSFET
Power dissipation: 90W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 130A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTE2932 Hersteller : NTE Electronics nte2932.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 13.5A; Idm: 130A; 90W; TO3PML
Mounting: THT
Case: TO3PML
Drain-source voltage: 200V
Drain current: 13.5A
On-state resistance: 85mΩ
Type of transistor: N-MOSFET
Power dissipation: 90W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 130A
Produkt ist nicht verfügbar