NTE2935 NTE Electronics, Inc
Hersteller: NTE Electronics, IncDescription: MOSFET N-CH 500V 6.2A TO3PML
Packaging: Bag
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3.1A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PML
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
auf Bestellung 794 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 16.28 EUR |
| 10+ | 15.47 EUR |
| 20+ | 14.64 EUR |
| 50+ | 13.83 EUR |
| 100+ | 13.52 EUR |
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Technische Details NTE2935 NTE Electronics, Inc
Description: MOSFET N-CH 500V 6.2A TO3PML, Packaging: Bag, Package / Case: TO-3P-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc), Rds On (Max) @ Id, Vgs: 850mOhm @ 3.1A, 10V, Power Dissipation (Max): 85W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-3PML, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V.
Weitere Produktangebote NTE2935
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| NTE2935 | Hersteller : NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 3.9A; Idm: 34A; 85W; TO3PML Mounting: THT Power dissipation: 85W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 34A Case: TO3PML Drain-source voltage: 500V Drain current: 3.9A On-state resistance: 0.85Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NTE2935 | Hersteller : NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 3.9A; Idm: 34A; 85W; TO3PML Mounting: THT Power dissipation: 85W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 34A Case: TO3PML Drain-source voltage: 500V Drain current: 3.9A On-state resistance: 0.85Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |